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"Fine structure observed in thermal emission process for the EL2 defect in GaAs", L. Dobaczewski, P. Kaczor, and A. R. Peaker 17th International Conference on Defects in Semiconductors, Gmunden, Austria, p. 1001. (1993)
"Investigation of Deep Levels in X-Ray Detector Materials with Photo Induced Current Spectroscopy", C.Eiche, M. Fiederle, J.Weese, D. Maier, D.Ebling, and K.W.Benz, Material Research Society Symposium Proceedings Pittsburgh Pennsylvenia, vol. 302, p. 231-236 (April 1993).
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