"Low-temperature irradiation-induced defects in germanium: In-situ analysis", A. Mesli, L. Dobaczewski, K. Bonde Nielsen, Vl. Kolkovsky, M. Christian Petersen, and A. Nylandsted Larsen, Phys. Rev. B, vol. 78, 165202 (2008). DOI link
"The antimony-vacancy defect in p-type germanium", C. E. Lindberg, J. Lundsgaard Hansen, P. Bomholt, A. Mesli, K. Bonde Nielsen, A. Nylandsted Larsen, and L. Dobaczewski, Appl. Phys. Lett., vol. 87, 172103 (2005). DOI link
"Vacancy – donor atom pairs in Ge crystals doped with P, As, Sb, and Bi", V. P. Markevich, I. D. Hawkins, A. R. Peaker, K. V. Emtsev, V. V. Emtsev, V. V. Litvinov, L. I. Murin, and L. Dobaczewski, Phys. Rev. B, vol. 70, 235213, (2004). DOI link
"Donor Level of Bond-Center Hydrogen in Germanium", L. Dobaczewski, K. Bonde Nielsen, N. Zangenberg, B. Bech Nielsen, A. R. Peaker, and V. Markevich, Phys. Rev. B, vol. 69, 245207 (2004). DOI link
"Electronic properties of vacancy-oxygen complex in Ge crystals", V. P. Markevich, I. D. Hawkins, A. R. Peaker, V. V. Litvinov, L. I. Murin, L. Dobaczewski, and J. L. Lindström, Appl. Phys. Lett., vol. 81, 1821, (2002).
"Radiation-induced defects and their transformations in oxygen-rich germanium crystals", V. P. Markevich, V. V. Litvinov, L. Dobaczewski, J. L. Lindström, L. I. Murin, and A. R. Peaker, Phys. Stat. Solidi c, 0, 703 (2003)
"Electronic properties of vacancy-oxygen complex in Ge crystals", V. P. Markevich, I. D. Hawkins, A. R. Peaker, V. V. Litvinov, L. I. Murin, L. Dobaczewski, and J. L. Lindström, Appl. Phys. Lett., vol. 81, 1821, 2002.