Scientific papers presenting results
obtained with a use of the
Silicon Germanium Silicon-Germanium III-V materials II-VI materials Nanostructures and interfaces
The technique
“Laplace-transform deep-level spectroscopy: the technique and its
applications to the study of point defects in semiconductors”, L.
Dobaczewski, A. R. Peaker, and K. Bonde
Nielsen, J. Appl. Phys. (Applied Physics
Reviews), 96, 4689 (2004). PDF (900kB)
"Fine Structure Observed in the Thermal Emission
Process for Defects in Semiconductors", L. Dobaczewski and M. Surma, Proceedings of the VI Defect Recognition and Image
Processing Conference,
"Laplace transform deep level transient
spectroscopy: a new insight into defect microscopy" L. Dobaczewski, I. D.
Hawkins, and A. R. Peaker, 1st Int. Conf. on
Materials for Microelectronics, Barcelona, 1994, Material Science and Technology
vol 11, p1071 (1995).
"A High Resolution Method for the
Analysis of Admittance Spectroscopy Data" D. Maier, P.Hug,
M.Fiederle, C.Eiche, D.Ebling, and J. Weese J. Appl. Phys. vol77, p3851-3857
(1995).
"Laplace transform spectroscopic studies of
defects in semiconductors", L. Dobaczewski, P. Kaczor,
I.D. Hawkins, and A.R. Peaker, J. Appl.
Phys. vol 76, p194 (1994) , PDF (730kB)
"Comment on Inverse Problems for the nonexponential deep level transient spectroscopy analysis
in semiconductor materials with strong disorder: Theoretical and computational
aspects" C.Eiche, D.Maier,
J. Weese, J. Honerkamp, and
K.W.Benz, [J.Appl.Phys.
vol74, 291 (1993)]; J. Appl. Phys. vol75 p1242
(1994).
"A regularisation method for nonlinear
ill-posed problems" J. Weese, Comp. Phys. Comm. vol 77, p429-440
(1993).
"Analysis of photoinduced
current transient spectroscopy (PICTS) data by a regularisation method ", C.Eiche, D.Maier, M.Schneider, D.Sinerius, J.Weese, K.W.Benz, and J. Honerkamp, J.Phys. Condens. Matter vol 4, p6131-6140
(1992)
"Tikhonovs
regularisation method for ill-posed problems", J.Honerkamp
and J. Weese, Continuum Mech. Thermodyn.vol
2 p17-30 (1990).
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“The E-centre
in silicon has a donor level in the band gap”, A. Nylandsted
Larsen, A. Mesli, K. Bonde
Nielsen, and H. Kortegaard Nielsen, L.
Dobaczewski, J. Adey, D. W. Palmer, R. Jones, P. R. Briddon, S. Öberg, Phys.
Rev. Lett, 97,
106402 (2006). DOI link
“Electrical
activity of PtH2 complex in silicon: High-resolution Laplace deep-level
spectroscopy and uniaxial-stress technique”, Vl. Kolkovsky, O. Andersen, L.
Dobaczewski, A. R. Peaker, and K. Bonde
Nielsen, Phys. Rev. B, 73, 195209 (2006). DOI link
“Effect of stress on the acceptor
level of the vacancy-oxygen-hydrogen complex in Si”, J. Coutinho, O. Andersen, L. Dobaczewski, K. Bonde Nielsen, A. R. Peaker, R.
Jones, S. Öberg,
and P. R. Briddon Phys. Rev. B, 68, 184106 (2003). DOI link
“The electrical activity of the carbon - hydrogen center in Si”, O. Andersen, L. Dobaczewski,
A. R. Peaker, K. Bonde
Nielsen, B. Hourahine, R. Jones, P. R. Briddon, and S. Oberg, Phys. Rev. B, 66, 235205, (2002). DOI link
“Saddle point for oxygen re-orientation in the
vicinity of a silicon vacancy”, L. Dobaczewski, O. Andersen, L. Rubaldo, K. Gościński,
V. P. Markevich, A. R. Peaker,
and K. Bonde Nielsen, Phys. Rev. B, 67, 195204 (2003) , PDF (100kB)
“Acceptor state of monatomic hydrogen in silicon
and the role of oxygen”, K. Bonde Nielsen, L.
Dobaczewski, S. Søgård, and B. Bech Nielsen, Phys. Rev. B, 65, 075205, (2002), PDF (90kB)
“Piezoscopic deep
level transient spectroscopy studies of the silicon divacancy”,
L. Dobaczewski, K. Gościński, Z. R. Żytkiewicz, K. Bonde
Nielsen, L. Rubaldo, O. Andersen, and A. R. Peaker, Phys. Rev. B 65, 113203, (2002)
“Defect reconfiguration as a precursor for
diffusion”, L. Dobaczewski, K. Bonde Nielsen,
O. Andersen, L. Rubaldo, K. Gościński,
and A. R. Peaker, in Proceedings of the 25th
International Conference on the Physics of Semiconductors, Osaka 2000,
edited by N. Miura and T. Ando (Springer Proceedings in Physics, New York,
2001), p. 1427.
“Electronic Levels of Isolated and
Oxygen-Perturbed Hydrogen in Silicon and Migration of Hydrogen”, K. Bonde Nielsen, L. Dobaczewski, S. Søgård,
and B. Bech Nielsen, 21st Int. Conference on Defects
in Semiconductors, Giessen, Physica B (invited talk) 308-310,
134 (2001)
“Piezospectroscopic analysis
of the hydrogen - carbon complexes in silicon”, O. Andersen, L.
Dobaczewski, A. R. Peaker, K. Bonde
Nielsen, B. Hourahine, R. Jones, P. R. Briddon, and S. Ö berg, 21st Int. Conference on
Defects in Semiconductors, Giessen, Physica B,
308-310, 139 (2001)
“Hydrogen Reactions with Electron Irradiation
Damage in Silicon”, A. R. Peaker, J. H.
Evans-Freeman, L. Rubaldo, I. D. Hawkins, K.
Vernon-Parry, and L. Dobaczewski 20th Int. Conference on Defects in
Semiconductors, Berkeley, 1999, Physica B 273-274,
243 (1999).
“Deep Levels Associated with vacancy-hydrogen
complexes investigated by Laplace transform DLTS” K. Bonde
Nielsen, L. Dobaczewski, K. Goscinski, R. Bendensen, and B. Bech Nielsen
20th Int. Conference on Defects in Semiconductors, Berkeley, 1999, Physica B 273-274, 167 (1999)
“Laplace transform deep level transient
spectroscopy studies of the G4 gold-hydrogen complex in silicon”, P. Deixler, J. Terry, I. D. Hawkins, J. H. Evans-Freeman, A.
R. Peaker, L. Rubaldo, D.
K. Maude, J.-C. Portal, L. Dobaczewski, K. Bonde
Nielsen, A. Nylandsted Larsen, and A. Mesli, Appl. Phys. Lett. 73, 3126 (1998).
“Tracing Diffusion by Laplace Deep-Level
Spectroscopy” K. Bonde Nielsen and L.
Dobaczewski, 19th Int. Conference on Defects in Semiconductors, Avairo, 1997 Materials Science Forum, 258-263, 331.
"High-Resolution DLTS studies of Transition
Metal-Related Defects in Silicon", L. Dobaczewski, P. Kaminski, R. Kozowski, and M. Surma, 18th Int.
Conference on Defects in Semiconductors, Sendai (invited talk) Materials
Science Forum, Vols 196-201, p. 669. (1996)
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„Alloy
shift of “no-germanium” iron-related electronic levels in
unstrained silicon-germanium alloys”, P. Kruszewski,
Vl. Kolkovsky, A. Mesli, L. Dobaczewski, N. V. Abrosimov,
V. P. Markevich, and A. R. Peaker,
Phys. Rev. B 76, 233203 (2007), DOI link.
“Iron-aluminium pair reconfiguration processes
in SiGe alloys”, P. Kruszewski,
A. Mesli, L. Dobaczewski, N. V. Abrosimov,
V. P. Markevich, and A. R. Peaker,
Journal of Materials Science: Materials
in Electronics, 18, 759 (2007). DOI link
“Interaction
of iron with the local environment in SiGe
alloys”, Vl. Kolkovsky,
A. Mesli, L. Dobaczewski, N. V. Abrosimov,
Z. R. Zytkiewicz, and A. R. Peaker,
Phys. Rev B. 74, 195204 (2006). DOI link
“The vacancy donor
pair in unstrained silicon, germanium and SiGe
alloys”, A. R. Peaker, V. P Markevich,
F. D. Auret, L. Dobaczewski, and N. V. Abrosimov, J. Phys.: Condens.
Matter, 17, S2293 (2005)
“Structure and properties of
vacancy-oxygen complexes in SiGe alloys”, V. P. Markevich,
A. R. Peaker, J. Coutinho,
R. Jones, V. J. B. Torres, S. Öberg,
P. R. Briddon, L. Dobaczewski, and N. V. Abrosimov, Phys. Rev. B, 69,
125218 (2004)
“Bond-centered
hydrogen in SiGe alloys”, K. Bonde Nielsen, L. Dobaczewski, and A. R. Peaker, Phys. Rev. B, 68, 045204 (2003), PDF (120kB)
“High-resolution DLTS studies of gold and
platinum acceptor states in diluted SiGe
alloys”, K. Gościński, L.
Dobaczewski, K. Bonde Nielsen, A. Nylandsted
Larsen, and A. R. Peaker, Phys. Rev. B, 63,
235309 (2001).
“Site preference next to germanium atom of gold and
platinum impurities in SiGe alloy” L.
Dobaczewski, K. Bonde Nielsen, K. Gościński,
A. R. Peaker, and A. Nylandsted
Larsen 20th Int. Conference on Defects in Semiconductors, Berkeley, 1999, Physica B 273-274, 620 (1999)
“Alloy splitting of platinum and gold related
levels in SiGe” L. Dobaczewski, K. Gościński, K. Bonde
Nielsen, A. Nylandsted Larsen, J. Lundsgaard
Hansen, and A. R. Peaker, Phys. Rev. Lett., 83, 4582 (1999)
“Site preference next to germanium atom of gold
and platinum impurities in SiGe alloy”, L.
Dobaczewski, K. Bonde Nielsen, K. Gościński,
A. R. Peaker, and A. Nylandsted
Larsen, 20th Int. Conference on Defects in Semiconductors, Berkeley, Physica B 273-274, 620 (1999)
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“Low-temperature irradiation-induced
defects in germanium: In-situ analysis”, A. Mesli,
L. Dobaczewski, K. Bonde Nielsen, Vl.
Kolkovsky, M. Christian Petersen, and A. Nylandsted Larsen, Phys. Rev. B, 78, 165202 (2008). DOI link
“The antimony-vacancy defect in
p-type germanium”, C. E. Lindberg, J. Lundsgaard
Hansen, P. Bomholt, A. Mesli,
K. Bonde Nielsen, A. Nylandsted
Larsen, and L. Dobaczewski, Appl. Phys. Lett., 87,
172103 (2005). DOI link
“Vacancy – donor atom pairs
in Ge crystals doped with P, As, Sb,
and Bi”, V. P. Markevich, I. D. Hawkins, A. R. Peaker, K. V. Emtsev, V. V. Emtsev, V. V. Litvinov, L. I. Murin,
and L. Dobaczewski, Phys. Rev. B, 70,
235213, (2004). DOI link
“Donor Level of Bond-Center Hydrogen in Germanium”, L. Dobaczewski, K. Bonde Nielsen, N. Zangenberg, B. Bech Nielsen, A. R. Peaker, and
V. Markevich, Phys. Rev. B, 69, 245207 (2004), PDF (70kB)
“Radiation-induced defects and their
transformations in oxygen-rich germanium crystals”, V. P. Markevich, V. V. Litvinov, L. Dobaczewski, J. L. Lindström, L. I. Murin, and
A. R. Peaker, phys. stat. solidi
c, 0, 703 (2003)
“Electronic properties of vacancy-oxygen complex
in Ge crystals”, V. P. Markevich,
I. D. Hawkins, A. R. Peaker, V. V. Litvinov, L. I. Murin, L. Dobaczewski, and J. L. Lindström,
Appl. Phys. Lett. 81, 1821, 2002.
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„Negative-U property of interstitial
hydrogen in GaAs“, Vl. Kolkovsky,
K. Bonde Nielsen, and A. Nylandsted
Larsen, and L. Dobaczewski, Phys. Rev. B, 78,
035211 (2008). DOI link
“Donor level of interstitial hydrogen
in GaAs” L. Dobaczewski, K. Bonde Nielsen, A. Nylandsted Larsen, and A. R. Peaker, Physica B, 376–377, 614 (2006). DOI link
"Structure of the DX state in (Al,Ga)As and Ga(As,P)", L. Dobaczewski, P. Kaczor,
M. Missous, A. R. Peaker,
and Z. R. Zytkiewicz, J. Appl.
Phys. vol 78, 2468 (1995), PDF (1300kB)
"Fine structure observed in thermal emission process
for the EL2 defect in GaAs", L. Dobaczewski, P. Kaczor,
and A. R. Peaker 17th International Conference on
Defects in Semiconductors,
"Investigation of Deep Levels in X-Ray Detector
Materials with Photo Induced Current Spectroscopy", C.Eiche,
M. Fiederle, J.Weese, D.
Maier, D.Ebling, and K.W.Benz,
Material Research Society Symposium Proceedings Pittsburgh Pennsylvenia
vol 302, p 231-236 (April 1993).
"Analysis of deep level in GaAs detector diodes
using impedance spectroscopy", C.Eiche, M.Fiederle, J.Weese, D.Maier, D.Ebling, J.Ludwig, and K.W.Benz, Material
Research Society Symposium Proceedings; Pittsburgh Pennsylvenia
vol 302, p 375-379 (April 1993).
"Evidence for substitutional
- interstitial defect motion leading to DX behavior
by donors in AlGaAs", L. Dobaczewski, P. Kaczor, M.Missous, A. R. Peaker, and Z. R. Zytkiewicz, Phys. Rev. Lett. vol 68, 2508 (1992).
"Formation of the DX state by donors in AlGaAs: experiment" L. Dobaczewski, P. Kaczor, M. Missous, Z. R. Zytkiewicz, D. Dobosz, and A. R. Peaker, 21th International School
on Physics of Semiconducting Compounds, Jaszowiec 1992, Poland, Acta
Phys. Pol. vol 82, 905,
(1992).
"Microscopic mechanism of the DX state formation
by donors in AlGaAs" , L. Dobaczewski, P. Kaczor, M. Missous, A. R. Peaker, and Z. R. Zytkiewicz,
21st International Conference on the Physics of Semiconductors, Beijing, China,
World Scientific, Singapore p.1557 (1992)
"Laplace transform DLTS studies of the DX centers in AlGaAs and GaSb", L. Dobaczewski, I. D.Hawkins,
P. Kaczor, M. Missous, I.
Poole and A.R. Peaker, 16th International Conference
on Defects in Semiconductors, ed. G. Davies, G. G. DeLeo,
M. Stavola, Bethlehem 1991, Materials Science Forum Vol 83-87, p.769
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"DX
centers in CdTe:In layers
grown by MBE", A. K. Zakrzewski, L. Dobaczewski,
T. Wojtowicz, J. Kossut,
and G. Karczewski, Proceedings of 23rd International Conference
on the Physics of Semiconductors, Eds M. Scheffler and R. Zimmermann, (World Scientific, Singapore,
1996), p. 3005.
“Analysis of Photoinduced
Transient Spectroscopy (PICTS) Data by a Regularisation Method: Application to
Compensation Defects in CdTe," C.Eiche, D.Maier, J.Weese, and K.W.Benz, Advanced
Materials for Optics and Electronics vol3, p269-274 (1994).
"Investigation of compensation defects in CdTe:Cl samples grown by different
techniques" C.Eiche, D.Maier,
D.Sinerius, J.Weese, K.W.Benz, and J.Honerkamp, J. Appl. Phys. 74, 6667 (1993)
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“Energy-state distributions of the Pb centers at the (100), (110), and
(111) Si/SiO2 interfaces investigated by Laplace Deep Level Transient
Spectroscopy”, L. Dobaczewski, S. Bernardini,
P. Kruszewski, P. K. Hurley, V. P. Markevich, I. D. Hawkins, and A. R. Peaker,
Appl. Phys. Lett, 92, 242104 (2008) DOI link
“Electron- and hole-related
electrical activity of InAs/GaAs quantum dots”,
P. Kruszewski, L. Dobaczewski, V. P. Markevich, C Mitchell, M. Missous,
and A. R. Peaker, Physica
B, 401–402, 580 (2007) DOI link.
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