"The E-centre in silicon has a donor level in the band gap", A. Nylandsted Larsen, A. Mesli, K. Bonde Nielsen, and H. Kortegaard Nielsen, L. Dobaczewski, J. Adey, D. W. Palmer, R. Jones, P. R. Briddon, S. Öberg, Phys. Rev. Lett, 97, 106402 (2006). DOI link
"Electrical activity of PtH2 complex in silicon: High-resolution Laplace deep-level spectroscopy and uniaxial-stress technique", Vl. Kolkovsky, O. Andersen, L. Dobaczewski, A. R. Peaker, and K. Bonde Nielsen, Phys. Rev. B, 73, 195209 (2006). DOI link
"Effect of stress on the acceptor level of the vacancy-oxygen-hydrogen complex in Si", J. Coutinho, O. Andersen, L. Dobaczewski, K. Bonde Nielsen, A. R. Peaker, R. Jones, S. Öberg, and P. R. Briddon Phys. Rev. B, 68, 184106 (2003). DOI link
"The electrical activity of the carbon - hydrogen center in Si", O. Andersen, L. Dobaczewski, A. R. Peaker, K. Bonde Nielsen, B. Hourahine, R. Jones, P. R. Briddon, and S. Oberg, Phys. Rev. B, 66, 235205, (2002). DOI link
"Saddle point for oxygen re-orientation in the vicinity of a silicon vacancy", L. Dobaczewski, O. Andersen, L. Rubaldo, K. Gościński, V. P. Markevich, A. R. Peaker, and K. Bonde Nielsen, Phys. Rev. B, 67, 195204 (2003)
"Acceptor state of monatomic hydrogen in silicon and the role of oxygen", K. Bonde Nielsen, L. Dobaczewski, S. Søgård, and B. Bech Nielsen, Phys. Rev. B, 65, 075205, (2002)
"Piezoscopic deep level transient spectroscopy studies of the silicon divacancy", L. Dobaczewski, K. Gościński, Z. R. Żytkiewicz, K. Bonde Nielsen, L. Rubaldo, O. Andersen, and A. R. Peaker, Phys. Rev. B, 65, 113203, (2002)
"Defect reconfiguration as a precursor for diffusion", L. Dobaczewski, K. Bonde Nielsen, O. Andersen, L. Rubaldo, K. Gościński, and A. R. Peaker, in Proceedings of the 25th International Conference on the Physics of Semiconductors, Osaka 2000, edited by N. Miura and T. Ando (Springer Proceedings in Physics, New York, 2001), p. 1427.
"Electronic Levels of Isolated and Oxygen-Perturbed Hydrogen in Silicon and Migration of Hydrogen", K. Bonde Nielsen, L. Dobaczewski, S. Søgård, and B. Bech Nielsen, 21st Int. Conference on Defects in Semiconductors, Giessen, Physica B (invited talk), 308-310, 134 (2001)
"Defect Reactions Associated with the Dissociation of the Phosphorus-Vacancy Pair in Silicon", V. P. Markevich, O. Andersen, I. F. Medvedeva, J. H. Evans-Freeman, I. D. Hawkins, L. I. Murin, L. Dobaczewski, and A. R. Peaker, 21st Int. Conference on Defects in Semiconductors, Giessen, Physica B, 308-310, 513 (2001)
"Piezospectroscopic analysis of the hydrogen - carbon complexes in silicon", O. Andersen, L. Dobaczewski, A. R. Peaker, K. Bonde Nielsen, B. Hourahine, R. Jones, P. R. Briddon, and S. Öberg, 21st Int. Conference on Defects in Semiconductors, Giessen, Physica B, 308-310, 139 (2001)
"High resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted Silicon", J. H. Evans-Freeman, A. R. Peaker, I. D. Hawkins, P. Y. Y. Kan, J. Terry, L. Rubaldo, M. Ahmed, S. Watts, and L. Dobaczewski, Proceedings ENDEASD Workshop, Santorini, April 1999 , invited talk, Material Science in Semiconductor Processing, 3, 237 (2000)
"Hydrogen Reactions with Electron Irradiation Damage in Silicon", A. R. Peaker, J. H. Evans-Freeman, L. Rubaldo, I. D. Hawkins, K. Vernon-Parry, and L. Dobaczewski 20th Int. Conference on Defects in Semiconductors, Berkeley, 1999, Physica B, 273-274, 243 (1999).
"Deep Levels Associated with vacancy-hydrogen complexes investigated by Laplace transform DLTS" K. Bonde Nielsen, L. Dobaczewski, K. Gościński, R. Bendensen, and B. Bech Nielsen 20th Int. Conference on Defects in Semiconductors, Berkeley, 1999, Physica B, 273-274, 167 (1999)
"Gold-Hydrogen complexes in silicon" L. Rubaldo, P. Deixler, I. D. Hawkins, J. Terry, D. K. Maude, J.-C. Portal, J. H. Evans-Freeman, L. Dobaczewski, and A. R. Peaker, Proceedings EMRS Meeting, Strasbourg, 1998, Materials Science and Engineering B, 58, 126 (1999)
"Laplace transform deep level transient spectroscopy studies of the G4 gold-hydrogen complex in silicon", P. Deixler, J. Terry, I. D. Hawkins, J. H. Evans-Freeman, A. R. Peaker, L. Rubaldo, D. K. Maude, J.-C. Portal, L. Dobaczewski, K. Bonde Nielsen, A. Nylandsted Larsen, and A. Mesli, , Appl. Phys. Lett., vol. 73, p. 3126 (1998).
"Tracing Diffusion by Laplace Deep-Level Spectroscopy" K. Bonde Nielsen and L. Dobaczewski, 19th Int. Conference on Defects in Semiconductors, Avairo, 1997 Materials Science Forum, 258-263, 331.
"The iron-boron pair in silicon: an old problem anew"; L. Dobaczewski and M. Surma, 25th International School on Physics of Semiconducting Compounds, Jaszowiec 1996, Poland, (invited talk) Acta Physica Pol., vol. 90, 613 (1996)
"Stable and metastable configurations of the iron-boron pair in silicon", L. Dobaczewski, M. Surma, and Z. Wilamowski Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin 1996, p. 2705.
"High-Resolution DLTS studies of Transition Metal-Related Defects in Silicon", L. Dobaczewski, P. Kaminski, R. Kozowski, and M. Surma, 18th Int. Conference on Defects in Semiconductors, Sendai (invited talk) Materials Science Forum, vols 196-201, p. 669. (1996)
"Transition Metal-Related Centres in Silicon Studied by the High-Resolution DLTS", L. Dobaczewski, P. Kaminski, R. Kozowski, and M. Surma, 24th International School on Physics of Semiconducting Compounds, Jaszowiec 1995, Poland, Acta Phys. Pol., vol. 88, p. 703, (1995).